Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots-Reference-Cited by-同舟云学术

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Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots

Published:2011-05-18 Issue:9 Volume:208 Page:2104-2107
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lim J. Y.,Song J. D.,Choi W. J.,Ahn J. P.,Yang H. S.

Funder

MEST

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201026714/fullpdf

Reference20 articles.

1. Assessment of InSb photodetectors on Si substrates

2. Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

3. InSb epilayers on GaAs(100) for spintronic and magneto-resistive sensor applications

4. Heteroepitaxy of InSb on silicon by metalorganic magnetron sputtering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrochemically deposited nanocrystalline InSb thin films and their electrical properties;Journal of Materials Chemistry C;2016

2. Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs;Thin Solid Films;2012-08

3. First-principles studies of AlSb, GaSb, and InSb on Si(111) and Si(100);Journal of the Korean Physical Society;2012-07

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