Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

Author:

Hnida K. E.1234,Bäßler S.56789,Mech J.11034,Szaciłowski K.1234,Socha R. P.11124,Gajewska M.1234,Nielsch K.56789,Przybylski M.12341,Sulka G. D.1314154

Affiliation:

1. AGH University of Science and Technology

2. Academic Centre for Materials and Nanotechnology

3. 30-059 Krakow

4. Poland

5. University of Hamburg

6. Multifunctional Nanostructures

7. Institute of Nanostructure and Solid State Physics

8. 20-355 Hamburg

9. Germany

10. Faculty of Non-Ferrous Metals

11. Jerzy Haber Institute of Catalysis and Surface Chemistry Polish Academy of Sciences

12. 30-239 Krakow

13. Jagiellonian University in Krakow

14. Department of Physical Chemistry and Electrochemistry

15. 30-060 Krakow

Abstract

Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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