Pressure effects on nanoprobe photoluminescence of quasi-zero-dimensional confinement quantum dots
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
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1. Improved estimation of embedded InGaAs/GaAs quantum dots locations using a domed-apex nanoprobe;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-09
2. Mechanism of Photoluminescence Quenching of InGaAs/GaAs Quantum Dots Resulting from Nanoprobe Indentation;Journal of Nanoscience and Nanotechnology;2011-01-01
3. Estimation of the location of embedded InGaAs/GaAs quantum dots by measuring strain-induced blueshift of photoluminescence;Physica E: Low-dimensional Systems and Nanostructures;2010-07
4. Direct-to-indirect transition observed in quantum dot photoluminescence with nanoprobe indentation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009
5. Nanofabrication of cylindrical STEM specimen of InGaAs/GaAs quantum dots for 3D-STEM observation;Ultramicroscopy;2004-11
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