Optical and structural microanalysis of GaN grown on SiN submonolayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2150589
Reference37 articles.
1. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
2. The origin of stress reduction by low-temperature AlN interlayers
3. In situ monitoring of the stress evolution in growing group-III-nitride layers
4. Self-organized domain formation in low-dislocation-density GaN
5. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of growth temperature for in-situ deposited SiNx interlayer on structural and optical properties of semipolar (112¯2) AlGaN films;Applied Surface Science;2023-01
2. Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask;Coatings;2020-12-25
3. GaN Heteroepitaxy on Strain-Engineered (111) Si/Si1−xGex;Journal of Electronic Materials;2019-02-21
4. Proposition of a model elucidating the AlN-on-Si (111) microstructure;Journal of Applied Physics;2018-06-07
5. Influence of in-situ deposited SiNx interlayer on crystal quality of GaN epitaxial films;Superlattices and Microstructures;2018-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3