Thin silicon oxides grown by low‐temperature rf plasma anodization and deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97929
Reference7 articles.
1. Plasma anodization as a dry low temperature technique for oxide film growth on silicon substrates
2. Low temperature oxidation of silicon using a microwave plasma disk source
3. Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition
4. Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition
5. Review of oxidation processes in plasmas†
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1. Nanodispersed Oxides-Plasma-Chemical Synthesis and Properties;Plasma Science and Technology;2007-10
2. Plasma-assisted oxidation, anodization, and nitridation of silicon;IBM Journal of Research and Development;1999-01
3. Effect of preoxidation on deposition of thin gate-quality silicon oxide film at low temperature by using a sputter-type electron cyclotron resonance plasma;Journal of Applied Physics;1997-12
4. A review of the plasma oxidation of silicon and its applications;Semiconductor Science and Technology;1993-07-01
5. Improved electrical properties of silicon dioxide films for MOS gate dielectrics grown in an inductively coupled r.f. plasma;Thin Solid Films;1992-11
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