Observation of thermally activated conduction at a GaN–sapphire interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1395525
Reference8 articles.
1. Electron transport mechanism in gallium nitride
2. Dislocation Scattering in GaN
3. Interpretation of the Temperature-Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD
4. Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
5. Direct evidence for defect conduction at interface between gallium nitride and sapphire
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3. The effect of the undoped GaN/buffer-layer interface on the operation of Schottky diodes and MESFET devices;Microelectronic Engineering;2019-06
4. A new growth method of semi-insulating GaN layer for HEMT structure by eliminating degenerate layer at GaN/sapphire interface;Current Applied Physics;2015-09
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