Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1854723
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1. High-mobility Si and Ge structures
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4. Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels
5. Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x
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