Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119584
Reference9 articles.
1. All solid source molecular beam epitaxy growth of strained‐layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)
2. Reliable red-emitting laser diodes grown by solid source molecular beam epitaxy
3. Threshold reduction in strained InGaAs single quantum well lasers by rapid thermal annealing
4. Influence of Rapid Thermal Annealing on the Properties of Strained GaInAs Quantum Well Lasers
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