Reliable red-emitting laser diodes grown by solid source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Reliable red-emitting laser diodes grown by solid source molecular beam epitaxy

Published:1995-05 Issue: Volume:150 Page:1333-1337
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Takahashi Kosei,Takeoka Tadashi,Kan Yasuo,Tsunoda Atsuo,Tani Kentaro,Hosoda Masahiro,Matsui Sadayoshi,Yamamoto Saburo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Reliable high-power (40 mW) operation of transverse-mode stabilised InGaAlP laser diodes with strained active layer

2. 30-mW 690-nm high-power strained-quantum-well AlGaInP laser

3. 150 mW fundamental-transverse-mode operation of 670 nm window laser diode

4. Strain-induced effects on the performance of AlGaInP visible lasers

5. Strained Single-Quantum-Well AlGaInP Laser Diodes with Asymmetric Waveguiding Structure

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes;Journal of Crystal Growth;1999-05

2. Red lasers grown by all-solid-source molecular beam epitaxy;Semiconductor Science and Technology;1999-01-01

3. Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxy;Applied Physics Letters;1997-07-28

4. High-performance GaInP/AlGaInP strained quantum well lasers grown by solid source molecular beam epitaxy;Semiconductor Science and Technology;1996-12-01

5. Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers;Applied Physics Letters;1996-06-10

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