Reliable high-power (40 mW) operation of transverse-mode stabilised InGaAlP laser diodes with strained active layer
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19920677?crawler=true&mimetype=application/pdf
Reference8 articles.
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 40-mW 100°C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes;IEEE Journal of Selected Topics in Quantum Electronics;1999
2. Semiconductor lasers;Quantum Electronics;1997-12-31
3. Chapter 5 AlGalnP Light-Emitting Diodes;Semiconductors and Semimetals;1997
4. Optical strength of semiconductor laser materials;Progress in Quantum Electronics;1996-01
5. Real index-guided AlGaInP visible laser with high-bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy;IEEE Journal of Selected Topics in Quantum Electronics;1995-06
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