Optical transition in SiGe self-organized dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118177
Reference22 articles.
1. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
2. Excitonic photoluminescence from Si-capped strainedSi1−xGexlayers
3. Near‐band‐gap photoluminescence of Si1−xGexalloys grown on Si(100) by molecular beam epitaxy
4. Observation of Direct Band Gap Properties in GenSimStrained-Layer Superlattices
5. Photoluminescence in short-period Si/Ge strained-layer superlattices
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1. Formation, structure, and phonon confinement effect of nanocrystalline Si1−xGex in SiO2‐Si‐Ge cosputtered films;Journal of Applied Physics;2004-11
2. Characterization of the local structure of Ge quantum dots by X-ray absorption;Journal of Alloys and Compounds;2004-11
3. Local microstructure of Ge layers buried in a silicon crystal studied by extended X-ray absorption fine structure;Journal of Alloys and Compounds;2004-01
4. RAMAN SPECTROSCOPIC STUDIES ON ELASTIC STRAIN AT GERMANIUM PARTICLES-SILICON MATRIX INTERFACE;Physics at Surfaces and Interfaces;2003-08
5. Elastic strain at the interface in Ge clusters on Si substrate—a Raman spectroscopic measurement;Journal of Physics and Chemistry of Solids;2003-02
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