Growth kinetics of Ge crystals on silicon oxide by nanoscale silicon seed induced lateral epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3245329
Reference25 articles.
1. Proceedings of Symposium B of the MRS 2004 Spring Meeting;Letertre F.,2004
2. Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices
3. Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
4. High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates
5. Lateral epitaxial growth of germanium on silicon oxide
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1. Simultaneous Crystallization and Strain Induction Enable Light-Emitting Germanium Nano/Microbridges for Infrared Lasers;ACS Applied Nano Materials;2022-04-05
2. Single crystal formation in micro/nano-confined domains by melt-mediated crystallization without seeds;Journal of Physics D: Applied Physics;2015-05-08
3. Coherent lateral-growth of Ge over insulating film by rapid-melting-crystallization;Thin Solid Films;2014-04
4. Crystallization in nano-confinement seeded by a nanocrystal—A molecular dynamics study;Journal of Applied Physics;2014-03-14
5. Processing of germanium for integrated circuits;TURKISH JOURNAL OF PHYSICS;2014
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