Accurate modeling of copper precipitation kinetics including Fermi level dependence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2374689
Reference14 articles.
1. Transition metals in silicon
2. Diffusion, solubility and gettering of copper in silicon
3. Out-Diffusion and Precipitation of Copper in Silicon: An Electrostatic Model
4. Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide
5. Enhanced solubility and ion pairing of Cu and Au in heavily doped silicon at high temperatures
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1. Electrical Activity of Iron and Copper in Si, SiGe and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
2. Modeling of light-induced degradation due to Cu precipitation in p-type silicon. II. Comparison of simulations and experiments;Journal of Applied Physics;2017-05-21
3. Modeling of light-induced degradation due to Cu precipitation in p-type silicon. I. General theory of precipitation under carrier injection;Journal of Applied Physics;2017-05-21
4. Engineering Solutions and Root-Cause Analysis for Light-Induced Degradation in p-Type Multicrystalline Silicon PERC Modules;IEEE Journal of Photovoltaics;2016-07
5. Synchrotron-based investigation of transition-metal getterability in n-type multicrystalline silicon;Applied Physics Letters;2016-05-16
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