Modeling of light-induced degradation due to Cu precipitation in p-type silicon. I. General theory of precipitation under carrier injection
Author:
Affiliation:
1. Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150 Espoo, Finland
2. Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg, Germany
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4983454
Reference76 articles.
1. Sensitivity of state-of-the-art and high efficiency crystalline silicon solar cells to metal impurities
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4. Cu-contamination of single crystalline silicon wafers with thickness of 100 μm during multi-wire sawing process
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