Temperature dependencies of annealing behaviors of GaInNAsSb∕GaNAs quantum wells for long wavelength dilute-nitride lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2746944
Reference18 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
3. GaInNAs(Sb) long wavelength communications lasers
4. Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers
5. Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
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1. Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys;Journal of Alloys and Compounds;2020-01
2. Continuous-Wave Operation of GaAs-Based 1.5-μm GaInNAsSb VCSELs;IEEE Photonics Technology Letters;2019-10-15
3. Electronic structures and optical gain of dilute nitride GaAs nanowires;Applied Physics Express;2018-08-20
4. Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells;Nanoscale Research Letters;2014-02-17
5. Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy;Applied Physics Letters;2014-02-03
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