Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1318228
Reference8 articles.
1. Electronic structure and phase stability ofGaAs1−xNxalloys
2. MOVPE growth of strained InGaAsN/GaAs quantum wells
3. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
4. High power CW operation of InGaAsN lasers at 1.3 [micro sign]m
5. GaAsSbN: a new low-bandgap material for GaAs substrates
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