Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4864111
Reference18 articles.
1. Carrier dynamics in MOVPE-grown bulk dilute nitride materials for multi-junction solar cells
2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
3. Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications
4. Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy
5. Wide depletion width of 1 eV GaInNAs solar cells by thermal annealing
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1. High current of GaInNAs solar cell integrating distributed Bragg reflectors grown by metalorganic vapor phase epitaxy;Applied Physics Express;2021-08-05
2. Research on monolithic AlGaInP/AlGaInAs/GaInAs/Ge quadruple-junction solar cell for high efficiency lattice-matched tandem photovoltaic device;Applied Physics Express;2020-06-17
3. Exploration of Lattice-matched Monolithic AlGaInP/AlGaAs/GaInAs/GaInNAs/Ge 5-junction Solar Cell Grown by MOVPE;2020 47th IEEE Photovoltaic Specialists Conference (PVSC);2020-06-14
4. Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states;Solar Energy Materials and Solar Cells;2019-09
5. Effect of the thermal annealing and the nominal composition in the elemental distribution of InxAl1-xAsySb1-y for triple junction solar cells;Journal of Alloys and Compounds;2019-07
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