Low writing field with large writing margin in toggle magnetic random access memories using synthetic antiferromagnet ferromagnetically coupled with soft magnetic layers-Reference-Cited by-同舟云学术

Low writing field with large writing margin in toggle magnetic random access memories using synthetic antiferromagnet ferromagnetically coupled with soft magnetic layers

Published:2006-08-07 Issue:6 Volume:89 Page:061909
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fukumoto Yoshiyuki,Suzuki Tetsuhiro,Tahara Shuichi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2335810

Reference6 articles.

1. Spin flop switching for magnetic random access memory

2. Oscillatory interlayer exchange coupling in Co/Ru multilayers and bilayers

3. Magnetoresistive random access memory operation error by thermally activated reversal (invited)

4. Enhancement of writing margin for low switching toggle magnetic random access memories using multilayer synthetic antiferromagnetic structures

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