Enhancement of writing margin for low switching toggle magnetic random access memories using multilayer synthetic antiferromagnetic structures-Reference-Cited by-同舟云学术

Enhancement of writing margin for low switching toggle magnetic random access memories using multilayer synthetic antiferromagnetic structures

Published:2006-04-15 Issue:8 Volume:99 Page:08N905
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fukumoto Yoshiyuki,Suzuki Tetsuhiro,Mori Kaoru,Honjo Hiroaki,Igarashi Chuji,Ohshima Norikazu,Miura Sadahiko,Ishiwata Nobuyuki,Tahara Shuichi,Asao Yoshiaki,Yoda Hiroaki

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2173962

Reference8 articles.

1. A 4-Mb toggle MRAM based on a novel bit and switching method

2. Oscillations in exchange coupling and magnetoresistance in metallic superlattice structures: Co/Ru, Co/Cr, and Fe/Cr

3. Interlayer exchange coupling in Co/Ru superlattices

4. Oscillatory interlayer exchange coupling in Co/Ru multilayers and bilayers

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4. Significant reduction in writing field of toggle MRAMs using novel free layer structures;Journal of Magnetism and Magnetic Materials;2007-03

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