Magnetoresistive random access memory operation error by thermally activated reversal (invited)-Reference-Cited by-同舟云学术

Magnetoresistive random access memory operation error by thermally activated reversal (invited)

Published:2005-05-15 Issue:10 Volume:97 Page:10P503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yamamoto Tetsuya,Kano Hiroshi,Higo Yutaka,Ohba Kazuhiro,Mizuguchi Tetsuya,Hosomi Masanori,Bessho Kazuhiro,Hashimoto Minoru,Ohmori Hiroyuki,Sone Takeyuki,Endo Keitaro,Kubo Shinya,Narisawa Hiroaki,Otsuka Wataru,Okazaki Nobumichi,Motoyoshi Makoto,Nagao Hajime,Sagara Tsutomu

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1851879

Reference3 articles.

1. Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory

2. Predicted time dependence of the switching field for magnetic materials

3. Spin flop switching for magnetic random access memory

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