Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3676255
Reference10 articles.
1. The investigation of capture/emission mechanism in high-k gate dielectric soft breakdown by gate current random telegraph noise approach
2. Postbreakdown Gate-Current Low-Frequency Noise Spectrum as a Detection Tool for High- $\kappa$ and Interfacial Layer Breakdown
3. Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements
4. Percolation models for gate oxide breakdown
5. On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study;Advanced Functional Materials;2021-04-23
2. Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations;Journal of Applied Physics;2017-07-14
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