Lengthening of the photoluminescence decay time of InAs quantum dots coupled to InGaAs∕GaAs quantum well
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2345467
Reference17 articles.
1. Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser
2. Magneto-optical study of nonmagnetic quantum dots coupled to a magnetic semiconductor quantum well
3. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy
4. Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature
5. Semiconductor Quantum Dots
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2. Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm;Applied Physics Letters;2018-05-28
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4. The continuum state in photoluminescence of type-II In0.46Al0.54As/Al0.54Ga0.46As quantum dots;Applied Physics Letters;2016-10-31
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