Contribution of ions and radicals in etching of Si[sub 1−x]Ge[sub x] epitaxial films using an electron-cyclotron-resonance chlorine plasma
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference13 articles.
1. Fabrication of a Si1-xGexChannel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition
2. CVD Si 1-x Ge x epitaxial growth and its applications to MOS devices
3. SiGe HBTs and ICs for optical-fiber communication systems
4. Reactive ion etching of SiGe alloys using fluorine‐containing plasmas*
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1. Chemically selective formation of Si–O–Al on SiGe(110) and (001) for ALD nucleation using H2O2(g);Surface Science;2016-10
2. Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer;JSTS:Journal of Semiconductor Technology and Science;2013-12-31
3. Epitaxial growth of Si:C/Si/SiGe into cavity formed by selective etching of SiGe;Solid-State Electronics;2009-08
4. Sidewall damage in plasma etching of Si/SiGe heterostructures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2009-07
5. Selective vapor phase etching of SiGe versus Si by HCl;Thin Solid Films;2008-11
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