Contribution of ions and radicals in etching of Si[sub 1−x]Ge[sub x] epitaxial films using an electron-cyclotron-resonance chlorine plasma-Reference-Cited by-同舟云学术

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Contribution of ions and radicals in etching of Si[sub 1−x]Ge[sub x] epitaxial films using an electron-cyclotron-resonance chlorine plasma

Published:2000 Issue:12 Volume:77 Page:1828
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Takeuchi Hajime,Matsuura Takashi,Murota Junichi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference13 articles.

1. Fabrication of a Si1-xGexChannel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition

2. CVD Si 1-x Ge x epitaxial growth and its applications to MOS devices

3. SiGe HBTs and ICs for optical-fiber communication systems

4. Reactive ion etching of SiGe alloys using fluorine‐containing plasmas*

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemically selective formation of Si–O–Al on SiGe(110) and (001) for ALD nucleation using H2O2(g);Surface Science;2016-10

2. Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer;JSTS:Journal of Semiconductor Technology and Science;2013-12-31

3. Epitaxial growth of Si:C/Si/SiGe into cavity formed by selective etching of SiGe;Solid-State Electronics;2009-08

4. Sidewall damage in plasma etching of Si/SiGe heterostructures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2009-07

5. Selective vapor phase etching of SiGe versus Si by HCl;Thin Solid Films;2008-11

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