Non-volatile resistive switching in oxide ion conductor BiYO3 thin films-Reference-Cited by-同舟云学术

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Non-volatile resistive switching in oxide ion conductor BiYO3 thin films

Published:2018-10-15 Issue:16 Volume:113 Page:162101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bhatnagar Divyanshu¹^ORCID,Kumar Ashwani²,Prabahar K.³,Suri Manan²,Srinivas A.³,Chatterjee Ratnamala¹^ORCID

Affiliation:

1. Magnetics and Advanced Ceramics Laboratory, Physics Department, IIT Delhi, New Delhi 110016, India

2. Department of Electrical Engineering, IIT Delhi, New Delhi 110016, India

3. Advanced Magnetics Group, Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Telangana 500066, India

Funder

Department of Science and Technology, Ministry of Science and Technology

Science and Engineering Research Board

Ministry of Human Resource Development

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5041790

Reference54 articles.

1. Resistance random access memory

2. Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

3. Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

4. Memory switching properties of e-beam evaporated SiOx on N++ Si substrate

5. Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polyimide-based ultraviolet-operated nonvolatile photomemory device;Applied Physics Letters;2022-11-21

2. High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3;Journal of Materials Chemistry C;2021

3. Transient Resistive Switching for Nonvolatile Memory Based on Water‐Soluble Cs 4 PbBr 6 Perovskite Films;physica status solidi (RRL) – Rapid Research Letters;2019-09-15

4. Electrical properties of pulsed laser deposited BaBiO3−δ thin films and their non-volatile resistive switching;Materials Research Express;2019-01-25

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