Transient Resistive Switching for Nonvolatile Memory Based on Water‐Soluble Cs 4 PbBr 6 Perovskite Films-Reference-Cited by-同舟云学术

Transient Resistive Switching for Nonvolatile Memory Based on Water‐Soluble Cs 4 PbBr 6 Perovskite Films

Published:2019-09-15 Issue:11 Volume:13 Page:1900397
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Chen Ruqi¹,Xu Jun¹,Lao Meimei¹,Liang Zhiwei¹,Chen Yukai¹,Zhong Chujie¹,Huang Linjun¹,Hao Aize²^ORCID,Ismail Muhammad³

Affiliation:

1. Center of Experimental Teaching for Common Basic CoursesSouth China Agricultural University Guangzhou 510642 P. R. China

2. Key Laboratory of Energy Materials ChemistryMinistry of EducationKey Laboratory of Advanced Functional MaterialsAutonomous RegionInstitute of Applied ChemistryXinjiang University Urumqi 830046 P. R. China

3. School of Electronics EngineeringChungbuk National University Cheongju 28644 P. R. Korea

Funder

Natural Science Foundation of Guangdong Province

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201900397

Reference34 articles.

1. Centimeter-Sized Cs4 PbBr6 Crystals with Embedded CsPbBr3 Nanocrystals Showing Superior Photoluminescence: Nonstoichiometry Induced Transformation and Light-Emitting Applications

2. Transient Resistive Switching Memory of CsPbBr3Thin Films

3. Inorganic caesium lead iodide perovskite solar cells

4. Halide perovskites for resistive random-access memories

5. Dimensionality Dependent Plasticity in Halide Perovskite Artificial Synapses for Neuromorphic Computing

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