Mechanism for resistive switching in an oxide-based electrochemical metallization memory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3683523
Reference42 articles.
1. Nanoionics-based resistive switching memories
2. Electrochemical metallization memories—fundamentals, applications, prospects
3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
4. Investigation of the Reliability Behavior of Conductive-Bridging Memory Cells
5. Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process
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