Author:
Gopalan C.,Ma Y.,Gallo T.,Wang J.,Runnion E.,Saenz J.,Koushan F.,Blanchard P.,Hollmer S.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Nanoscale memory elements based on solid-state electrolytes;Kozicki;IEEE Trans Nanotechnol,2006
2. Programmable metallization cell memory based on Ag–Ge–S and Cu–Ge–S solid electrolytes;Kozicki;IEEE Non-Volatile Memory Technol Symp Technol Dig,2005
3. Silver incorporation in Ge–Se glasses used in programmable metallization cell devices;Mitkova;J Noncryst Sol,2002
4. Conductive bridging RAM (CBRAM): An emerging non-volatile memory technology scalable to sub 20nm;Kund;IEDM Technol Dig,2005
5. Conductive bridging RAM development from single cells to 2Mb arrays;Symanczyk;IEEE Non-Volatile Memory Technol Symp Technol Dig,2007
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