Influence of annealing on spin-dependent tunneling characteristics of fully epitaxial Co2MnGe/MgO/Co50Fe50 magnetic tunnel junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3083559
Reference15 articles.
1. Giant Tunnel Magnetoresistance at Room Temperature for Junctions using Full-Heusler Co2FeAl0.5Si0.5Electrodes
2. Giant tunneling magnetoresistance in Co2MnSi∕Al–O∕Co2MnSi magnetic tunnel junctions
3. Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co2MnSi thin film and a MgO tunnel barrier
4. Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al∕MgO∕Co50Fe50 magnetic tunnel junctions with exchange biasing
5. Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co2MnGe and a MgO tunnel barrier
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1. Electronic and transport properties of Heusler alloy based magnetic tunneling junctions: A first principles study;Computational Materials Science;2023-01
2. Intrinsically dominated anomalous Hall effect in pulsed laser deposited epitaxial Co2MnGe ferromagnetic full Heusler alloy thin films;RSC Advances;2023
3. High L21-atomic ordering and spin-polarization in Co2MnZ (Z = Ge, Sn) Heusler thin films with low-temperature annealing process;APL Materials;2022-09-01
4. An All-Heusler Alloy Magnetic Tunneling Junction with Low Resistance Area Product and High Magnetocrystalline Anisotropy: A Dft Study;SSRN Electronic Journal;2022
5. Robustness of the Half-Metallicity at the Interfaces in Co2MnSi -Based All-Full-Heusler-Alloy Spintronic Devices;Physical Review Applied;2021-03-03
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