Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co2MnSi thin film and a MgO tunnel barrier-Reference-Cited by-同舟云学术

Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co2MnSi thin film and a MgO tunnel barrier

Published:2006-11-06 Issue:19 Volume:89 Page:192505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ishikawa T.,Marukame T.,Kijima H.,Matsuda K.-I.,Uemura T.,Arita M.,Yamamoto M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2378397

Reference21 articles.

1. New Class of Materials: Half-Metallic Ferromagnets

2. Epitaxial growth and magnetic properties of single-crystal Co2MnGe Heusler alloy films on GaAs (001)

3. Electronic structure and spectroscopy of the quaternary Heusler alloy Co2Cr1−xFexAl

4. Large Tunneling Magnetoresistance at Room Temperature Using a Heusler Alloy with the B2 Structure

5. Structural and magnetic properties and tunnel magnetoresistance for Co2(Cr,Fe)Al and Co2FeSi full-Heusler alloys

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