Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co2MnGe and a MgO tunnel barrier
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2713209
Reference26 articles.
1. Epitaxial growth and magnetic properties of single-crystal Co2MnGe Heusler alloy films on GaAs (001)
2. Slater-Pauling behavior and origin of the half-metallicity of the full-Heusler alloys
3. Spin injection from the Heusler alloy Co2MnGe into Al0.1Ga0.9As∕GaAs heterostructures
4. Electronic structure and spectroscopy of the quaternary Heusler alloy Co2Cr1−xFexAl
5. Epitaxial growth of Heusler alloy thin films on MgO (001) substrates by magnetron sputtering
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1. First-principles computational study on structural, elastic, magnetic, electronic, and thermoelectric properties of Co2MnGe: a potential Heusler ternary compound;The European Physical Journal B;2022-12
2. Interfacial quality to control tunnelling magnetoresistance;Frontiers in Physics;2022-10-04
3. Thickness-dependent electronic and magnetic states of Mn and Co atoms at Mn-rich Co2Mn1.20Ge0.38/MgO interfaces via soft x-ray magnetic circular dichroism;Physica B: Condensed Matter;2022-02
4. Spin gapless semiconductor and nearly spin semimetal antiferromagnets: The case of the inverse Heusler compounds Mn2LiZ (Z = Al and Ga);Materials Research Bulletin;2021-11
5. Heusler alloys for spintronic devices: review on recent development and future perspectives;Science and Technology of Advanced Materials;2021-03-29
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