Author:
Hirohata Atsufumi,Elphick Kelvin,Lloyd David C.,Mizukami Shigemi
Abstract
Theoretically, coherent tunnelling through an MgO barrier can achieve over 1,000% magnetoresistance at room temperature. To date, this has not been demonstrated experimentally. In this article, we have categorised magnetic tunnel junctions into four groups and have investigated possible causes of the reduction in their magnetoresistance by correlating their interfacial atomic structures and spin-polarised electron transport. We have concluded that the spin fluctuation induced by dislocations and disordering at a ferromagnet/barrier interface reduced the corresponding magnetoresistance.
Funder
United Kingdom Research and Innovation
Japan Science and Technology Agency
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics,Materials Science (miscellaneous),Biophysics
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献