NEW INSTABILITY CRITERION FOR RECOMBINATION WAVE DIODES
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653532
Reference4 articles.
1. RECOMBINATION WAVES IN Au‐DOPED Si
2. Double injection in semiconductors heavily doped with deep two-level traps
3. Space charge and oscillation effects in gold-doped silicon diodes
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ionic species responsible for the plasma anodization of silicon;Applied Physics Letters;1988-07-04
2. Post-breakdown bulk oscillations in gold-doped silicon p+−i−n+ double-injection diodes;Solid-State Electronics;1980-03
3. Current oscillations due to filamentary double injection in diodes with deep levels;Solid-State Electronics;1979-04
4. Instabilities and small-signal response of double injection structures with deep traps;Solid-State Electronics;1972-12
5. Recombination instabilities in semiconductors doped with deep two‐level traps;Journal of Applied Physics;1972-11
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