RECOMBINATION WAVES IN Au‐DOPED Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653153
Reference11 articles.
1. Electrical Oscillations in Silicon Compensated with Deep Levels
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recombination instabilities in semiconductors doped with deep two‐level traps;Journal of Applied Physics;1972-11
2. Oscillations of injected carriers in p-type indium antimonide;Physica Status Solidi (a);1972-10-16
3. Semiconductors' characterization: Kinetics of one energy-level recombination centers and surface states;Solid-State Electronics;1972-03
4. Recombination wave diode;Solid-State Electronics;1971-11
5. NEW INSTABILITY CRITERION FOR RECOMBINATION WAVE DIODES;Applied Physics Letters;1971-06-15
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