Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire-Reference-Cited by-同舟云学术

Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire

Published:2020-11-02 Issue:18 Volume:117 Page:182103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fares Chaker¹^ORCID,Ren Fan¹^ORCID,Tadjer Marko J.²^ORCID,Woodward Jeffrey³^ORCID,Mastro Michael A.²^ORCID,Feigelson Boris N.²,Eddy Charles R.²^ORCID,Pearton S. J.⁴^ORCID

Affiliation:

1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

2. Naval Research Laboratory, Washington, DC 20375, USA

3. American Society for Engineering Education Postdoctoral Fellow, Residing at Naval Research Laboratory, Washington, DC 20375, USA

4. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

Office of Naval Researchthrough the Naval Research Laboratory Basic Research Program

Defense Threat Reduction Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0025835

Reference41 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. A review of Ga2O3materials, processing, and devices

3. Gallium nitride devices for power electronic applications

4. Delta-doped β-gallium oxide field-effect transistor

5. AlGaN/GaN HEMTs-an overview of device operation and applications

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