Ion implantation and rapid thermal annealing of Mg, Cd, and Si in AlxGa1−xAs grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341719
Reference14 articles.
1. Far-Infrared Optical Properties of Quenched Germanium III. Effects of Additional Impurities
2. Be+/O+‐ion implantation in GaAs–AlGaAs heterojunctions
3. A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas
4. High‐quality Si‐implanted GaAs activated by a two‐step rapid thermal annealing technique
5. Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lamp
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Processing of compound semiconductors;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
2. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997
3. n‐type ion implantation doping of AlxGa1−xAs (0⩽x⩽0.7);Journal of Applied Physics;1996-08-15
4. Formation mechanism of a new emission band in Si-ion-implanted GaAs after rapid thermal annealing;Journal of Materials Science Letters;1996
5. ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY;International Journal of Modern Physics B;1993-12-30
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