Carbon doping and growth rate reduction by CCl4during metalorganic chemical‐vapor deposition of GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357219
Reference24 articles.
1. Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride
2. p‐type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride
3. Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily dopedp‐type GaAs
4. Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy
5. Carbon diffusion in undoped,n‐type, andp‐type GaAs
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