High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop-Reference-Cited by-同舟云学术

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High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

Published:2013-01-14 Issue:2 Volume:102 Page:022106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Davies M. J.,Badcock T. J.,Dawson P.,Kappers M. J.,Oliver R. A.,Humphreys C. J.

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4781398

Reference23 articles.

1. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

2. Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

3. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

4. Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density

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1. Effects of GaN cap layer thickness on photoexcited carrier density in green luminescent InGaN multiple quantum wells;Japanese Journal of Applied Physics;2023-03-01

2. Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes;AIP Advances;2022-12-01

3. Impact of carrier diffusion on the internal quantum efficiency of InGaN quantum well structures;Journal of Materials Chemistry C;2022

4. Evaluation of internal quantum efficiency and stimulated emission characteristics in AlGaN-based multiple quantum wells;Japanese Journal of Applied Physics;2021-12-01

5. Carrier density dependence of localized carrier recombination dynamics in orange-emitting InGaN/GaN nanocolumns;Journal of Applied Physics;2020-10-07

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