Influence of plasma conditions on the defect formation mechanism in amorphous hydrogenated silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356397
Reference30 articles.
1. Plasma polymerization and deposition of amorphous hydrogenated silicon from rf and dc silane plasmas
2. Effects of discharge parameters on deposition rate of hydrogenated amorphous silicon for solar cells from pure SiH4plasma
3. Influence of plasma deposition on structural and electronic properties of a-Ge:H
4. Influence of plasma deposition on structural and electronic properties of a-Ge:H
5. A study of the properties of hydrogenated amorphous germanium produced by r.f. glow discharge as the electrode gap is varied the link between microstructure and optoelectronic properties
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3. Reduction of Tail State on Boron Doped Hydrogenated Amorphous Silicon Oxide Films Prepared at High Hydrogen Dilution;Journal of Nanoscience and Nanotechnology;2013-12-01
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5. Influence of Discharge Geometry on Power Dissipation and Sheath Impedances in Silane Discharges;Japanese Journal of Applied Physics;1997-07-30
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