In situ passivation of InP surface using H2S during metal organic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3233935
Reference20 articles.
1. Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy
2. Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)
3. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates
4. Structure and interface bonding of GeO2∕Ge∕In0.15Ga0.85As heterostructures
5. Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric
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