Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1332403
Reference21 articles.
1. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
2. Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diode
3. Stimulated emission study of InGaN/GaN multiple quantum well structures
4. Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells
5. Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence
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