Pt-assisted oxidation of (100)-Ge/high-k interfaces and improvement of their electrical quality
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3500822
Reference15 articles.
1. High-k/Ge MOSFETs for future nanoelectronics
2. Surface Defects and Passivation of Ge and III–V Interfaces
3. Ge/GeO2Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
4. Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
5. The role of La surface chemistry in the passivation of Ge
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2. High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1−xGex/Si buffer layer by RPCVD;Materials Research Express;2017-07-25
3. Effect of Remote Oxygen Scavenging on Electrical Properties of Ge-Based Metal–Oxide–Semiconductor Capacitors;Journal of Electronic Materials;2016-08-19
4. Platinum-assisted post deposition annealing of the n-Ge/Y2O3interface;Semiconductor Science and Technology;2016-06-13
5. Improving the ALD-grown Y 2 O 3 /Ge interface quality by surface and annealing treatments;Applied Surface Science;2016-04
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