Electron transport in Sb‐doped metalorganic epitaxial GaAs grown at moderate As‐rich conditions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357416
Reference25 articles.
1. On the formation of the SbGaheteroantisite in metalorganic vapor‐phase epitaxial GaAs:Sb
2. Electronic properties of theSbGaheteroantisite defect in GaAs:Sb
3. Layer quality of Sb-doped GaAs grown by metalorganic vapor phase epitaxy
4. Behavior of an EL5‐like defect in metalorganic vapor‐phase epitaxial GaAs:Sb
5. Effect of Sb doping on point defect ensemble in MOVPE - GaAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Defect formation in GaAs grown by organometallic vapor phase epitaxy and the structure of the native defect EL2;Journal of Crystal Growth;2002-05
2. Antimony doped GaAs: A model of dominant current transport mechanism;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11
3. Antimony doped GaAs: Role of the isoelectronic dopant in defect evolution;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05
4. On the morphology of Sb-doped GaAs layers grown by MOVPE;Thin Solid Films;1995-09
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