On the formation of the SbGaheteroantisite in metalorganic vapor‐phase epitaxial GaAs:Sb
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105488
Reference20 articles.
1. Effect of iso-electronic dopants on the dislocation density of GaAs
2. Dislocation-free GaAs and InP crystals by isoelectronic doping
3. High quality epitaxial GaAs and InP wafers by isoelectronic doping
4. Effects of In and Sb doping in LPE growth thermodynamics and in GaAs layer qualities
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