Orientation effect on microwave dielectric properties of Si-integrated Ba0.6Sr0.4TiO3 thin films for frequency agile devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2236099
Reference14 articles.
1. High tunability (Ba,Sr)TiO3 thin films grown on atomic layer deposited TiO2 and Ta2O5 buffer layers
2. The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films
3. Evaluation of Ta2O5 as a buffer layer film for integration of microwave tunable Ba1−xSrxTiO3 based thin films with silicon substrates
4. Integration of Ba1−xSrxTiO3-based active thin films with silicon-compatible materials and process science protocols to enable affordable on-the-move communications technologies
5. High-tunability and low-microwave-loss Ba0.6Sr0.4TiO3 thin films grown on high-resistivity Si substrates using TiO2 buffer layers
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1. Scaling behavior of the BaZr0.1Ti0.9O3 (BZT) dielectric ceramic at the elevated temperatures (400 °C – 540 °C);Materials Science and Engineering: B;2022-09
2. Analyses of Substrate-Dependent Broadband Microwave (1–40 GHz) Dielectric Properties of Pulsed Laser Deposited Ba0.5Sr0.5TiO3 Films;Crystals;2021-07-22
3. Microstructure analysis of epitaxial BaTiO3 thin films on SrTiO3-buffered Si: Strain and dislocation density quantification using HRXRD methods;Materialia;2020-12
4. Sr-induced dipole scatter in BaxSr1−xTiO3 : Insights from a transferable-bond valence-based interatomic potential;Physical Review B;2019-11-27
5. Orientation dependence of phase diagrams and physical properties in epitaxial Ba 0.6 Sr 0.4 TiO 3 films;Solid State Communications;2018-04
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