Evaluation of Ta2O5 as a buffer layer film for integration of microwave tunable Ba1−xSrxTiO3 based thin films with silicon substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1505999
Reference31 articles.
1. The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films
2. Investigation of bulk and interfacial properties of Ba0.5Sr0.5TiO3 thin film capacitors
3. Structure/property relationships in ferroelectric thin films for frequency agile microwave electronics
4. Mg-doped Ba0.6Sr0.4TiO3 thin films for tunable microwave applications
5. Low temperature deposition of Ba1-xSrxTiO3 thin films by ECR plasma-enhanced metalorganic chemical vapor deposition
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