Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO2 layers
Author:
Affiliation:
1. Thayer School of Engineering, Dartmouth College, 14 Engineering Drive, Hanover, New Hampshire 03755, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/apl/108/10/1.4943192.pdf?itemId=/content/aip/journal/apl/108/10/10.1063/1.4943192&mimeType=pdf&containerItemId=content/aip/journal/apl
Reference27 articles.
1. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy
2. Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys
3. GeSn p-i-n detectors integrated on Si with up to 4% Sn
4. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
5. Ultrathin GeSn p-channel MOSFETs grown directly on Si(111) substrate using solid phase epitaxy
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1. Effect of Defects on the Performance of Si-Based GeSn/Ge Mid-Infrared Phototransistors;IEEE Sensors Journal;2021-03-01
2. GeSn on Insulators (GeSnOI) Toward Mid-infrared Integrated Photonics;Frontiers in Physics;2019-09-23
3. Wide dual-band dual-circularly polarized holographic metasurface;Journal of Physics D: Applied Physics;2019-08-05
4. Demonstration of mm long nearly intrinsic GeSn single-crystalline wires on quartz substrate fabricated by nucleation-controlled liquid-phase crystallization;Japanese Journal of Applied Physics;2019-02-18
5. Emerging technologies in Si active photonics;Journal of Semiconductors;2018-05-29
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