Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film
Author:
Funder
NSFC
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4862972
Reference18 articles.
1. A polymer/semiconductor write-once read-many-times memory
2. Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing
3. Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP–ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer
4. High-Performance Programmable Memory Devices Based on Hyperbranched Copper Phthalocyanine Polymer Thin Films
5. Electrical bistabilities and carrier transport mechanisms of write-once-read-many-times memory devices fabricated utilizing ZnO nanoparticles embedded in a polystyrene layer
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1. Solution-processed PEDOT: PSS/PVA polymer blend write-once-read-many memory devices;E3S Web of Conferences;2024
2. Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoOx Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor;ACS Applied Electronic Materials;2023-05-31
3. Modifying the native aluminum oxide layer by simple methods for fabricating write-once-read-many memory devices;Journal of Materials Science: Materials in Electronics;2023-05
4. Temperature induced low voltage write-once-read-many resistive switching in Ag/BTO/Ag thin films;Journal of Materials Science: Materials in Electronics;2022-04-21
5. Write-once-read-many-times resistive switching behavior of amorphous barium titanate based device with very high on-off ratio and stability;Applied Physics Letters;2021-06-28
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