Temperature induced low voltage write-once-read-many resistive switching in Ag/BTO/Ag thin films-Reference-Cited by-同舟云学术

Temperature induced low voltage write-once-read-many resistive switching in Ag/BTO/Ag thin films

Published:2022-04-21 Issue:15 Volume:33 Page:12490-12499
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Shringi Amit Kumar,Betal Atanu,Sahu Satyajit,Kumar Mahesh^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10854-022-08206-9.pdf

Reference21 articles.

1. J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3, 429 (2008)

2. X. Chen, G. Wu, P. Jiang, W. Liu, D. Bao, Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications. Appl. Phys. Lett. 94, 033501 (2009)

3. T. Yanagida, K. Nagashima, K. Oka, M. Kanai, A. Klamchuen, B.H. Park, T. Kawai, Scaling effect on unipolar and bipolar resistive switching of metal oxides. Sci. Rep. 3, 1 (2013)

4. A.K. Shringi, A. Betal, S. Sahu, M. Kumar, Write-once-read-many-times resistive switching behavior of amorphous barium titanate based device with very high on-off ratio and stability. Appl. Phys. Lett. 118, 263505 (2021)

5. J. Qi, M. Olmedo, J. Ren, N. Zhan, J. Zhao, J.-G. Zheng, J. Liu, Resistive switching in single epitaxial ZnO nanoislands. ACS Nano 6, 1051 (2012)

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