Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
Funder
National Research Foundation-Prime Minister's office, Republic of Singapore (NRF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4922586
Reference33 articles.
1. Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates
2. GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
3. Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy
4. Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy
5. Novel plastic strain‐relaxation mode in highly mismatched III‐V layers induced by two‐dimensional epitaxial growth
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1. Novel 3D reciprocal space visualization of strain relaxation in InSb on GaAs substrates;Journal of Vacuum Science & Technology A;2024-04-09
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