Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors-Reference-Cited by-同舟云学术

Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

Published:2015-10-19 Issue:16 Volume:107 Page:163503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hou Bin¹²,Ma Xiao-Hua¹²,Chen Wei-Wei¹²,Zhu Jie-Jie¹²^ORCID,Zhao Sheng-Lei²,Chen Yong-He²,Xie Yong¹²,Zhang Jin-Cheng²,Hao Yue²

Affiliation:

1. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China

2. Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China

Funder

National Basic Research Program of China

National Natural Science Foundation of China (NSFC)

Program for New Century Excellent Talents in University (NCET)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4934185

Reference20 articles.

1. High temperature power performance of AlGaN∕GaN high-electron-mobility transistors on high-resistivity silicon

2. AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

3. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

4. Normally off AlGaN/GaN high electron mobility transistors with p-InGaN cap layer

5. Low Damage,>tex<$hbox Cl_2$>/tex<-Based Gate Recess Etching for 0.3->tex<$muhbox m$>/tex<Gate-Length AlGaN/GaN HEMT Fabrication

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